philips semiconductors product specification three quadrant triacs BTA208X-1000B high commutation general description quick reference data passivated high voltage, high commutation symbol parameter max. unit triac in a full pack, plastic envelope. this triac is intended for use in motor control circuits where high blocking voltage, high v drm repetitive peak off-state 1000 v static and dynamic dv/dt and high di/dt can voltages occur. this device will commutate the full i t(rms) rms on-state current 8 a rated rms current at the maximum rated i tsm non-repetitive peak on-state 65 a junction temperature, without the aid of a current snubber. pinning - sot186a pin configuration symbol pin description 1 main terminal 1 2 main terminal 2 3 gate case isolated limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit v drm repetitive peak off-state - 1000 v voltages i t(rms) rms on-state current full sine wave; - 8 a t hs 73 ?c i tsm non-repetitive peak full sine wave; on-state current t j = 25 ?c prior to surge t = 20 ms - 65 a t = 16.7 ms - 71 a i 2 ti 2 t for fusing t = 10 ms - 21 a 2 s di t /dt repetitive rate of rise of i tm = 12 a; i g = 0.2 a; 100 a/ s on-state current after di g /dt = 0.2 a/ s triggering i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms - 0.5 w period t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 12 3 case august 2003 1 rev 1.000
philips semiconductors product specification three quadrant triacs BTA208X-1000B high commutation isolation limiting value & characteristic t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v isol r.m.s. isolation voltage from all f = 50-60 hz; sinusoidal - - 2500 v three terminals to external waveform; heatsink r.h. 65% ; clean and dustfree c isol capacitance from t2 to external f = 1 mhz - 10 - pf heatsink thermal resistances symbol parameter conditions min. typ. max. unit r th j-hs thermal resistance full or half cycle junction to heatsink with heatsink compound - - 4.5 k/w without heatsink compound - - 6.5 k/w r th j-a thermal resistance in free air - 55 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current 1 v d = 12 v; i t = 0.1 a t2+ g+ 2 18 50 ma t2+ g- 2 21 50 ma t2- g- 2 34 50 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 31 60 ma t2+ g- - 34 90 ma t2- g- - 30 60 ma i h holding current v d = 12 v; i gt = 0.1 a - 31 60 ma v t on-state voltage i t = 10 a - 1.3 1.65 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; t j = 125 ?c 0.25 0.4 - v i d off-state leakage current v d = v drm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; 1000 4000 - v/ s off-state voltage exponential waveform; gate open circuit di com /dt critical rate of change of v dm = 400 v; t j = 125 ?c; i t(rms) = 8 a; 15 38 - a/ms commutating current without snubber; gate open circuit t gt gate controlled turn-on i tm = 12 a; v d = v drm(max) ; i g = 0.1 a; - 2 - s time di g /dt = 5 a/ s 1 device does not trigger in the t2-, g+ quadrant. august 2003 2 rev 1.000
philips semiconductors product specification three quadrant triacs BTA208X-1000B high commutation fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus heatsink temperature t hs . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t hs 73?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0246810 0 2 4 6 8 10 12 = 180 120 90 60 30 it(rms) / a ptot / w ths(max) / c 125 116 107 98 89 80 71 1 -50 0 50 100 150 0 2 4 6 8 10 bt137x 73 c ths / c it(rms) / a 10us 100us 1ms 10ms 100ms 10 100 1000 t / s itsm / a di /dt limit t t i tsm time i tj initial = 25 c max t 0.01 0.1 1 10 0 5 10 15 20 25 surge duration / s it(rms) / a 1 10 100 1000 0 number of cycles at 50hz itsm / a 1 10 20 30 40 50 60 70 80 t i tsm time i tj initial = 25 c max t -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 tj / c vgt(tj) vgt(25 c) august 2003 3 rev 1.000
philips semiconductors product specification three quadrant triacs BTA208X-1000B high commutation fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-hs , versus pulse width t p . fig.12. typical, critical rate of change of commutating current di com /dt versus junction temperature. -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c t2+ g+ t2+ g- t2- g- igt(tj) igt(25 c) 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 vt / v it / a tj = 125 c tj = 25 c typ max vo = 1.264 v rs = 0.0378 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s 0.01 0.1 1 10 tp / s zth j-hs (k/w) t p p t d bidirectional unidirectional with heatsink compound without heatsink compound -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c ih(tj) ih(25c) 20 40 60 80 100 120 140 1 10 100 1000 t j / c di com /dt (a/ms) typ min august 2003 4 rev 1.000
philips semiconductors product specification three quadrant triacs BTA208X-1000B high commutation mechanical data dimensions in mm net mass: 2 g fig.13. sot186a; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 10.3 max 3.2 3.0 4.6 max 2.9 max 2.8 seating plane 6.4 15.8 max 0.6 2.5 2.54 5.08 12 3 3 max. not tinned 3 0.5 2.5 0.9 0.7 m 0.4 15.8 max. 19 max. 13.5 min. recesses (2x) 2.5 0.8 max. depth 1.0 (2x) 1.3 august 2003 5 rev 1.000
philips semiconductors product specification three quadrant triacs BTA208X-1000B high commutation definitions data sheet status data sheet product definitions status 2 status 3 objective data development this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the specification in any manner without notice preliminary data qualification this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product product data production this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change notification (cpcn) procedure snw-sq-650a limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. ? philips electronics n.v. 2003 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. 2 please consult the most recently issued datasheet before initiating or completing a design. 3 the product status of the device(s) described in this datasheet may have changed since this datasheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. august 2003 6 rev 1.000
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